kw.\*:("JUNCTION FIELD EFFECT TRANSISTOR")
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FORMATION OF DOUBLE DIELECTRIC LAYERS (AL2O3/SIO2) ON SILICON BY D.C. PLASMA ANODIZATIONBECK RB; JAKUBOWSKI A.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 1; PP. 63-67; BIBL. 11 REF.Article
THE OPTIMUM CLOSED-LOOP TRANSFER FUNCTION OF A PHASE-LOCKED LOOP USED FOR SYNCHRONIZATION PURPOSESMOENECLAEY M.1983; IEEE TRANSACTIONS ON COMMUNICATIONS; ISSN 0090-6778; USA; DA. 1983; VOL. 31; NO 4; PP. 549-553; BIBL. 6 REF.Article
BIT-ERROR RATE OF PSK HETERODYNE OPTICAL COMMUNICATION SYSTEM AND ITS DEGRADATION DUE TO SPECTRAL SPREAD OF TRANSMITTER AND LOCAL OSCILLATORKIKUCHI K; OKOSHI T; NAGAMATSU M et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 417-418; BIBL. 9 REF.Article
A QUASI-ONE-DIMENSIONAL ANALYSIS OF VERTICAL JFET DEVICES OPERATED IN THE BIPOLAR MODEBELLONE S; CARUSO A; SPIRITO P et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 403-413; BIBL. 14 REF.Article
ACOUSTIC AND PIEZOELECTRIC SCATTERING OF TWO-DIMENSIONAL ELECTRON GAS IN JUNCTION FET STRUCTURESBASU PK; KEYA BHATTACHARYA.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; USA; DA. 1982; VOL. 15; NO 27; PP. 5711-5714; BIBL. 9 REF.Article
POIRE MONOLITHIQUE INTEGREE DE TRANSISTORS A EFFET DE CHAMP A JONCTION PNVORONOV SA; KOZLOV YU G; OZHOGIN MA et al.1976; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1976; VOL. 19; NO 12; PP. 75-77; BIBL. 3 REF.Article
FLICKER NOISE IN SEMICONDUCTORS: NOT A TRUE BULK EFFECTVAN DER ZIEL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 883-884; BIBL. 7 REF.Article
CHARACTERISTICS OF J.F.E.T.S. TAKING THE SEPARATION OF GATE ELECTRODE FROM THE SOURCE AND DRAIN ELECTRODES INTO ACCOUNT.VISWANATHA KV; SATYAM M.1977; PROC. INST. ELECTR. ENGRS; G.B.; DA. 1977; VOL. 124; NO 6; PP. 525; BIBL. 3 REF.Article
MACROMODELING OF FET/BIPOLAR OPERATIONAL AMPLIFIERSKRAJEWSKA G; HOLMES FE.1979; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 6; PP. 1083-1087; BIBL. 5 REF.Article
HOW TO USE THE ON/OFF RELAY ACTION OF JUNCTION FIELD-EFFECT TRANSISTORS.BUCHANON JE.1977; DIGIT. DESIGN; U.S.A.; DA. 1977; VOL. 7; NO 8; PP. 26-34 (7P.)Article
JFET-TRANSISTOR YIELDS DEVICE WITH NEGATIVE RESISTANCE.PORTER JA.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1098-1099; BIBL. 5 REF.Article
ELECTRICAL PROPERTIES OF A TRIODE-LIKE SILICON VERTICAL-CHANNEL JFETOZAWA O.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2115-2123; BIBL. 19 REF.Article
AN IN0 . 43GA0 . 47 AS FUNCTION FIELD-EFFECT TRANSISTORLEHENY RF; NAHORY RE; POLLACK MA et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 110-111; BIBL. 10 REF.Article
LE TRANSISTOR STATIQUE A INDUCTION1978; ELECTRON. APPL. INDUSTR.; FRA; DA. 1978; NO 258; PP. 24-25Article
DETERMINATION OF DOPANT PROFILES BY VOLTAGE MEASUREMENTS.LEHOVEC K; CHIH HONG CHEN.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 284-286; BIBL. 10 REF.Article
UN NOUVEAU COMMUTATEUR ANALOGIQUE PERFORMANT ET ECONOMIQUE: LE VARAFET, UN SYSTEME INTEGRE A J-FET.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 242; PP. 25-27Article
HIGH TEMPERATURE CHARACTERISTICS OF BIPOLAR MODE POWER JFET OPERATIONBALIGA BJ.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 143-145; BIBL. 8 REF.Article
EMITTER SPACE CHARGE LAYER TRANSIT TIME IN BIPOLAR JUNCTION TRANSISTORSRUSTAGI SC; CHATTOPADHYAYA SK.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 367-370; BIBL. 13 REF.Article
CIAGLY MODEL TRANZYSTORA POLOWEGO ZLACZOWEGO (JFET) = MODELE CONTINU DU TRANSISTOR A EFFET DE CHAMP A JONCTIONTARCZYNSKI W.1980; ROZPR. ELEKTROTECH.; POL; DA. 1980; VOL. 26; NO 1; PP. 129-139; ABS. ENG/FRE/GER/RUS; BIBL. 10 REF.Article
THE EVALUATION OF JFET MODEL PARAMETERS FOR COMPUTER SIMULATION.SMITH DH; ANDERSON HEB.1977; MONITOR; AUSTRAL.; DA. 1977; VOL. 38; NO 11; PP. 177-186; BIBL. 8 REF.Article
THE SATURATION EFFECT AND BREAKDOWN VOLTAGE OF THE JUNCTION FET.GORAL AB.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 11; PP. 161-165; ABS. RUSSE; BIBL. 5 REF.Article
INTERMODULATIONSVERHALTEN ADDITIVER FELDEFFEKT-TRANSISTOR-MISCHSTUFEN = PROPRIETES D'INTERMODULATION DES ETAGES D'UN MELANGEUR ADDITIF A TRANSISTOR A EFFET DE CHAMPVAN ELLEN H.1979; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1979; VOL. 33; NO 12; PP. 498-502; ABS. ENG; BIBL. 2 REF.Article
CALCULATION OF THERMAL NOISE IN J.F.E.T.SSCHROEDER D; WEINHAUSEN G.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 137-141; BIBL. 11 REF.Article
A SOLID-STATE VARIABLE RESISTOR USING A JUNCTION FET.SUGITA E; YASUDA Y; AKIYA M et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 788-796; BIBL. 5 REF.Article
V-GROOVE POWER JUNCTION FIELD-EFFECT TRANSISTOR FOR V.H.F. APPLICATIONS.MOK TD; SALAMA CAT.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 582-583; BIBL. 4 REF.Article
